6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

925-928

Citation:

K. Matsumoto et al., "6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method", Materials Science Forum, Vols. 264-268, pp. 925-928, 1998

Online since:

February 1998

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$38.00

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