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HomeMaterials Science ForumMaterials Science Forum Vols. 264-2686H-SiC Schottky Diode Edge Terminated Using...

6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

925-928

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.925

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Online since:

February 1998

Authors:

K. Matsumoto, Y. Chen, J. Kuzmik, Shigehiro Nishino

Keywords:

Edge Termination, Reactive Ion Etching, Schottky, Sputtering

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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