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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Silicon Carbide High Frequency Devices

Silicon Carbide High Frequency Devices

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

907-912

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.907

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Online since:

February 1998

Authors:

C.E. Weitzel

Keywords:

Gallium Arsenide, Gallium Nitride (GaN), HFET, High Power FET, High-Frequency, MESFET, Silicon, Silicon Carbide (SiC), SITs

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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