Paper Titles

Recent Advances in SiC Power Devices
p.895

Vital Issues for SiC Power Devices
p.901

Silicon Carbide High Frequency Devices
p.907

Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors
p.913

Electrothermal Simulation of 4H-SiC Power Devices
p.917

High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
p.921

6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method
p.925

Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes
p.929

High Voltage Schottky Barrier Diodes on P-Type 4H and 6H-SiC
p.933

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electrothermal Simulation of 4H-SiC Power Devices

Electrothermal Simulation of 4H-SiC Power Devices

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide, III-Nitrides and Related Materials

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

917-920

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.917

Citation:

Cite this paper

Online since:

February 1998

Authors:

Nicolas G. Wright, D.J. Morrison, C. Mark Johnson, Anthony G. O'Neill

Keywords:

Electro-Thermal Simulation, Switching Comparison, UMOS

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: