Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors
p.913
p.913
Electrothermal Simulation of 4H-SiC Power Devices
p.917
p.917
High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
p.921
p.921
6H-SiC Schottky Diode Edge Terminated Using Amorphous SiC by Sputtering Method
p.925
p.925
Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes
p.929
p.929
High Voltage Schottky Barrier Diodes on P-Type 4H and 6H-SiC
p.933
p.933
High Voltage 4H SiC Rectifiers Using Pt and Ni Metallization
p.937
p.937
Medici Simulation of 6H-SiC Oxide Ramp Profile Schottky Structure
p.941
p.941
A Dual-Metal-Trench Schottky Pinch-Rectifier in 4H SiC
p.945
p.945
Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
929-932
Citation:
Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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