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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers...

High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

921-924

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.921

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Online since:

February 1998

Authors:

Tsunenobu Kimoto, Qamar-ul Wahab, Alexsandre Ellison, Urban Forsberg, M. Tuominen, Rositza Yakimova, Anne Henry, Erik Janzén

Keywords:

Edge Termination, High Power Devices, On-Resistance, Schottky Diode

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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