High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

921-924

DOI:

10.4028/www.scientific.net/MSF.264-268.921

Citation:

T. Kimoto et al., "High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers", Materials Science Forum, Vols. 264-268, pp. 921-924, 1998

Online since:

February 1998

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