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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Vital Issues for SiC Power Devices

Vital Issues for SiC Power Devices

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Silicon Carbide, III-Nitrides and Related Materials

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

901-906

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.901

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Online since:

February 1998

Authors:

Kazukuni Hara

Keywords:

Accumulation Mode, Avalanche Breakdown, Comet-Tail Defects, Epilayer Channel, Micropipe Defects, Power EC-FET, Specific On-Resistance

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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