Authors: Masahito Yoshikawa, K. Saitoh, Takeshi Ohshima, Hisayoshi Itoh, Isamu Nashiyama, Yasutaka Takahashi, K. Ohnishi, Hajime Okumura, Sadafumi Yoshida

1017

Differences between Interfacial Bonding Chemistry at SiC-SiO₂ Interfaces Prepared by Low-Temperature Remote Plasma-Assisted Oxidation and High Temperature Conventional Thermal Oxidation

Authors: G. Lucovsky, Hideaki Niimi

1021

Fast Generation-Recombination Channels due to Epitaxial Defects in SiC Metal-Oxide-Semiconductor Devices

Authors: Andrey O. Konstantinov, Qamar-ul Wahab, Christer Hallin, Chris I. Harris, Béla Pécz

1025

6H-SiC MOS Capacitors on Sloped Surfaces: Realisation, Characterisation and Electrical Results

Authors: Frédéric Lanois, Dominique Planson, P. Lassagne, Christophe Raynaud, Edwige Bano

1029

Computer Model Simulation of SiC Diode Reverse-Bias Instabilities due to Deep Energy Impurity Levels

Authors: R.P. Joshi, C. Fazi

1033

Nanosecond Risetime Pulse Characterization of SiC p⁺n Junction Diode Breakdown and Switching Properties

Authors: Philip G. Neudeck, C. Fazi

1037

Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes

Authors: Martin Domeij, Bo Breitholtz, Jan Linnros, Mikael Östling

1041