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Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

ToC:

Table of Contents

Paper Title Page

Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures
Authors: Carl Mikael Zetterling, Mikael Östling, Chris I. Harris, Nils Nordell, K. Wongchotigul, Michael G. Spencer
877
Metal-Nitride-Semiconductor Capacitors on 6H-SiC
Authors: Stefan Berberich, Philippe Godignon, José Millan, Dominique Planson, H.L. Hartnagel, A. Senes
881
Surface Micromachining of Polycrystalline SiC Deposited on SiO2 by APCVD
Authors: A.J. Fleischman, X. Wei, Christian A. Zorman, Mehran Mehregany
885
Behaviour of Polycrystalline SiC and Si Surface-Micromachined Lateral Resonant Structures at Elevated Temperatures
Authors: A.J. Fleischman, S. Roy, Christian A. Zorman, Mehran Mehregany
889
Recent Advances in SiC Power Devices
Authors: James A. Cooper, M.R. Melloch, J.M. Woodall, J. Spitz, K.J. Schoen, Jason Henning
895
Vital Issues for SiC Power Devices
Authors: Kazukuni Hara
901
Silicon Carbide High Frequency Devices
Authors: C.E. Weitzel
907
Wide Dynamic Range RF Mixers Using Wide-Bandgap Semiconductors
Authors: C. Fazi, Philip G. Neudeck
913
Electrothermal Simulation of 4H-SiC Power Devices
Authors: Nicolas G. Wright, D.J. Morrison, C. Mark Johnson, Anthony G. O'Neill
917
High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers
Authors: Tsunenobu Kimoto, Qamar-ul Wahab, Alexsandre Ellison, Urban Forsberg, M. Tuominen, Rositza Yakimova, Anne Henry, Erik Janzén
921

Showing 211 to 220 of 350 Paper Titles

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