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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN

Authors: B. Schöttker, J. Kühler, Donat J. As, D. Schikora, K. Lischka

1173

Elaboration of III-V Nitrides Quantum Dots in Molecular Beam Epitaxy

Authors: B. Daudin, F. Widmann, G. Feuillet, Y. Samson, J.-L. Rouvière, N. Pelekanos

1177

Growth of AIN on 6H- and 4H-SiC by Gas-Source Molecular Beam Epitaxy

Authors: K. Järrendahl, S.A. Smith, T.S. Zheleva, R.S. Kern, Robert F. Davis

1181

Molecular Beam Epitaxy Growth and Characterisation of GaAs_1-xN_xLayers

Authors: J.V. Thordson, O. Zsebök, Ulf Södervall, T.G. Andersson

1185

Effect of Elastic Strain on Growth of Ternary Group-III Nitride Compounds

Authors: S.Yu. Karpov, Yuri Makarov, M.S. Ramm

1189

Influence of Activated Nitrogen on Plasma Assisted MBE Growth of GaN

Authors: U. Birkle, C. Thomas, M. Fehrer, S. Einfeldt, H. Heinke, D. Hommel

1193

Surface Reconstruction and MBE Growth of Cubic GaN on (001) GaAs: A Total Energy Study

Authors: J.L.F. da Silva, R. Enderlein, L.M.R. Scolfaro, J.R. Leite, A. Tabata, K. Lischka, D. Schikora, Friedhelm Bechstedt

1197

Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy

Authors: F. Hamdani, M. Yeadon, David John Smith, H. Tang, W. Kim, A. Salvador, A.E. Botchkarev, J. Murray Gibson, Hadis Morkoç

1201

Low Temperature Growth of Gallium Nitride on Quartz and Sapphire Substrates

Authors: E.M. Goldys, M.J. Paterson, H.Y. Zuo, T.L. Tansley

1205

STM Observation of Initial Nitridation Process of Ga on Si Substrates

Authors: Y. Nakada, Hajime Okumura

1209