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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

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Table of Contents

Paper Title Page

Time-Resolved Spectroscopy on GaN/AlGaN Double Heterostructures and Quantum Wells

Authors: J.S. Im, J. Off, A. Sohmer, F. Scholz, A. Hangleiter

1299

Non-Linear Exciton Spectroscopy of GaN/AlGaN Quantum Wells

Authors: R. Cingolani, G. Coli, R. Rinaldi, L. Calcagnile, H. Tang, A.E. Botchkarev, W. Kim, A. Salvador, Hadis Morkoç

1303

Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL Spectra

Authors: Y. Iyechika, Y. Ono, T. Takada

1307

Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double Heterostructures

Authors: A. Graber, R. Averbeck, U. Barnhöfer, H. Riechert, Helmut Tews

1311

Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates

Authors: W.V. Lundin, A.S. Usikov, B.V. Pushnyi, U.I. Ushakov, M.V. Stepanov, N.M. Shmidt, T.V. Shubina, A.V. Sakharov, N.N. Faleev, V. Solov'ev, Alla A. Sitnikova, Yu.A. Kudriavtsev, B.Ya. Ber, Yu.M. Zadiranov

1315

Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

Authors: Bo Monemar, I.A. Buyanova, Peder Bergman, Hiroshi Amano, Isamu Akasaki

1319

Residual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence Data

Authors: M. Topf, W. Kriegseis, W. Burkhardt, I. Dirnstorfer, D. Meister, B.K. Meyer

1323

Are there any Shallow Acceptors in GaN?

Authors: Bo Monemar

1327

Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure

Authors: V. Sukhoveyev, V. Ivantsov, A.S. Zubrilov, V. Nikolaev, Irina P. Nikitina, V. Bougrov, D. Tsvetkov, Vladimir Dmitriev

1331

Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence

Authors: A. Petersson, S. Tanaka, Y. Aoyagj, L. Samuelson

1335