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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Optical Characterization of InGaN Layers and...

Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double Heterostructures

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1311-1314

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1311

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Online since:

February 1998

Authors:

A. Graber, R. Averbeck, U. Barnhöfer, H. Riechert, Helmut Tews

Keywords:

Electroluminescence, Heterostructures, III/V Ratio, Interface Luminescence, I-V Characteristic, MBE, Potential Fluctuations

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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