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Non-Linear Exciton Spectroscopy of GaN/AlGaN Quantum Wells
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Quantum Confinement Stark Effect in InGaN SQW Studied by Electric Field Modulated PL Spectra
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Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double Heterostructures
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Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
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Room Temperature Photoluminescence Linewidth versus Material Quality of GaN
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Residual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence Data
p.1323

Are there any Shallow Acceptors in GaN?
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Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure
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Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Room Temperature Photoluminescence Linewidth...

Room Temperature Photoluminescence Linewidth versus Material Quality of GaN

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1319-1322

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1319

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Online since:

February 1998

Authors:

Bo Monemar, I.A. Buyanova, Peder Bergman, Hiroshi Amano, Isamu Akasaki

Keywords:

Exciton, Exciton-Phonon Interaction, Photoluminescence (PL)

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Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

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