Paper Titles

Optical and Structural Studies of Thick AlGaN Alloy Layers and AlGaN/GaN Heterostructures on Sapphire Substrates
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Room Temperature Photoluminescence Linewidth versus Material Quality of GaN
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Residual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence Data
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Are there any Shallow Acceptors in GaN?
p.1327

Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure
p.1331

Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence
p.1335

Cathodoluminescence of Cubic GaN Epilayers
p.1339

Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates
p.1343

Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Crystal Structure and Optical Properties of Bulk...

Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1331-1334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1331

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Online since:

February 1998

Authors:

V. Sukhoveyev, V. Ivantsov, A.S. Zubrilov, V. Nikolaev, Irina P. Nikitina, V. Bougrov, D. Tsvetkov, Vladimir Dmitriev

Keywords:

Bulk Crystals, Crystal Structure, Liquid Phase, Optical Property, Room-Temperature Stimulated Emission

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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