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Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence
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Cathodoluminescence of Cubic GaN Epilayers
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Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates
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Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
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Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Optical Properties of Cubic Phase GaN Epilayers...

Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1343-1346

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1343

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Online since:

February 1998

Authors:

Marek Godlewski, V.Yu. Ivanov, Peder Bergman, Bo Monemar, A. Barski, R. Langer

Keywords:

Cubic Phase GaN, Photoluminescence (PL), Shallow Acceptors

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Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

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