Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence
p.1335
p.1335
Cathodoluminescence of Cubic GaN Epilayers
p.1339
p.1339
Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates
p.1343
p.1343
Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
p.1347
p.1347
Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
p.1351
p.1351
Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
p.1355
p.1355
Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope
p.1359
p.1359
Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN
p.1363
p.1363
Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs
p.1367
p.1367
Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
1351-1354
Citation:
Online since:
February 1998
Keywords:
Price:
Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: