Paper Titles

Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
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Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
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Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
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Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope
p.1359

Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN
p.1363

Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs
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Surface Polariton Raman Spectroscopy in Cubic GaN Epitaxial Layers
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Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
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Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Raman Microprobe Measurement of Under-Damped...

Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1363-1366

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1363

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Online since:

February 1998

Authors:

Hiroshi Harima, H. Sakashita, Shinichi Nakashima

Keywords:

Carrier Density, Coupled Mode, Damping, LO Phonon, Plasmon, Raman Scattering

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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