Paper Titles

Crystal Structure and Optical Properties of Bulk GaN Crystals Grown from a Melt at Reduced Pressure
p.1331

Characterization of GaN Quantum Dots on AlGaN/SiC Substrate Using Cathodoluminescence
p.1335

Cathodoluminescence of Cubic GaN Epilayers
p.1339

Optical Properties of Cubic Phase GaN Epilayers Grown by Molecular Beam Epytaxy on SiC/Silicon (100) Substrates
p.1343

Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers
p.1347

Effect of Thermal Strain and Carrier Concentration on the Phonon Frequencies of GaN
p.1351

Characterization of GaN Epilayers Grown on Sapphire and SiC Substrates
p.1355

Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope
p.1359

Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN
p.1363

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Analysis of Reflectivity Measurements for GaN...

Analysis of Reflectivity Measurements for GaN Films Grown on GaAs: Influence of Surface Roughness and Interface Layers

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1347-1350

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1347

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Online since:

February 1998

Authors:

S. Shokhovets, R. Goldhahn, Volker Cimalla, T.S. Cheng, C.T. Foxon

Keywords:

GaAs Substrate, Interface Layer, Reflectivity, Refractive Index, Surface Roughness (SR)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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