Paper Titles

Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN
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Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs
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Surface Polariton Raman Spectroscopy in Cubic GaN Epitaxial Layers
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Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
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Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence
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A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
p.1385

Electrical Characterization of the AlN/Si(111) System
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Electrical and Optical Properties of Highly Strained GaN Epilayers
p.1393

Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Optical Admittance Spectroscopy of Deep Centers in...

Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1381-1384

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1381

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Online since:

February 1998

Authors:

A. Krtschil, P. Fischer, Hartmut Witte, M. Lisker, J. Christen, U. Birkle, S. Einfeldt, D. Hommel

Keywords:

Deep Level, Optical Admittance Spectroscopy, Photoluminescence (PL)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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