Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence
p.1381
p.1381
A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
p.1385
p.1385
Electrical Characterization of the AlN/Si(111) System
p.1389
p.1389
Electrical and Optical Properties of Highly Strained GaN Epilayers
p.1393
p.1393
Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN
p.1397
p.1397
Nanometre Scale Reactive Ion Etching of GaN Epilayers
p.1403
p.1403
Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace Annealing
p.1407
p.1407
Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant
p.1411
p.1411
Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates
p.1415
p.1415
Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
1397-1402
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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