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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Schottky Barrier Modification on n-GaN Using a...

Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1411-1414

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1411

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Online since:

February 1998

Authors:

Kevin Matocha, T. Paul Chow, H. Lu, I. Bhat

Keywords:

Annealing, Calcium, Implant Activation, Ion Implantation, Magnesium, Phosphorus, Schottky Barrier Modification, Schottky Diode

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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