Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN
p.1397
p.1397
Nanometre Scale Reactive Ion Etching of GaN Epilayers
p.1403
p.1403
Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace Annealing
p.1407
p.1407
Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant
p.1411
p.1411
Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates
p.1415
p.1415
Nitride-Based Emitters on SiC Substrates
p.1421
p.1421
Blue-U.V. Homojunction GaN LEDs Fabricated by MOVPE
p.1425
p.1425
Electroluminescence of GaN pn Diodes
p.1429
p.1429
Ultraviolet Stimulated Emission in GaN/AlGaN Multiple Quantum Wells
p.1433
p.1433
Electrical Characteristics of In Situ Grown Lateral P +N GaN Junction Diodes on Sapphire Substrates
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
1415-1420
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Online since:
February 1998
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© 1998 Trans Tech Publications Ltd. All Rights Reserved
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