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Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN
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Nanometre Scale Reactive Ion Etching of GaN Epilayers
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Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace Annealing
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Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Nanometre Scale Reactive Ion Etching of GaN...

Nanometre Scale Reactive Ion Etching of GaN Epilayers

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1403-1406

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1403

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Online since:

February 1998

Authors:

D. Coquillat, S.K. Murad, A. Ribayrol, C.J.M. Smith, R.M. De La Rue, Chris D.W. Wilkinson, O. Briot, R.L. Aulombard

Keywords:

CH₄, CHF₃, Gallium Nitride (GaN), Poly(methyl methacrylate) (PMMA), Reactive Ion Etching, SiCl₄, SiN_x, Titanium (Ti)

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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