Paper Titles

Photoluminescence and Raman Scattering Characterization of GaN, InGaN and AlGaN Films Using a UV Excitation Raman-Photoluminescence Microscope
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Raman Microprobe Measurement of Under-Damped LO-Phonon-Plasmon Coupled Mode in n-Type GaN
p.1363

Micro-Raman and Electron Microscopy Analysis of Cubic GaN Layers on (001) GaAs
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Surface Polariton Raman Spectroscopy in Cubic GaN Epitaxial Layers
p.1371

Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition
p.1375

Optical Admittance Spectroscopy of Deep Centers in Galliumnitride - Correlation with Photoluminescence
p.1381

A Two-Band Analysis of Electrical Transport in n-Type GaN Epilayers
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Electrical Characterization of the AlN/Si(111) System
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Electrical and Optical Properties of Highly Strained GaN Epilayers
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Electrical Characterization of Dopants and Deep...

Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1375-1380

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1375

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Online since:

February 1998

Authors:

W. Götz, N.M. Johnson

Keywords:

Acceptor, Deep Level, DLTS, Donors, Hall-Effect, Hydrogen, Magnesium, MOCVD, Silicon

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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