Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1375-1380

DOI:

10.4028/www.scientific.net/MSF.264-268.1375

Citation:

W. Götz and N.M. Johnson, "Electrical Characterization of Dopants and Deep Level Defects for III-V Nitrides Grown by Metalorganic Chemical Vapor Deposition", Materials Science Forum, Vols. 264-268, pp. 1375-1380, 1998

Online since:

February 1998

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