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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Residual Donors in GaN Epitaxial Films - A...

Residual Donors in GaN Epitaxial Films - A Correlation of HALL Effect, SIMS and Photoluminescence Data

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1323-1326

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1323

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Online since:

February 1998

Authors:

M. Topf, W. Kriegseis, W. Burkhardt, I. Dirnstorfer, D. Meister, B.K. Meyer

Keywords:

Gallium Nitride (GaN), Hall, Photoluminescence (PL), Residual Donors, SIMS

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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