Volumes

Materials Science Forum
Vols. 284-286

Materials Science Forum
Vols. 282-283

Materials Science Forum
Vols. 278-281

Materials Science Forum
Vols. 276-277

Materials Science Forum
Vols. 273-275

Materials Science Forum
Vols. 269-272

Materials Science Forum
Vols. 264-268

Materials Science Forum
Vols. 258-263

Materials Science Forum
Vols. 255-257

Materials Science Forum
Vols. 251-254

Materials Science Forum
Vol. 250

Materials Science Forum
Vols. 248-249

Materials Science Forum
Vol. 247

HomeMaterials Science ForumMaterials Science Forum Vols. 264-268

Materials Science Forum Vols. 264-268

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268

Export:

ToC:

Table of Contents

Paper Title Page

Nitridation of GaAs(100) Wafers for the Preparation of Zincblende-Structure Thick GaN Layers

Authors: Atsushi Yamamoto, T. Shin-ya, Y. Yamauchi, A. Hashimoto

1213

Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates

Authors: T.S. Cheng, C.T. Foxon, N.J. Jeffs, D.J. Dewsnip, L.B. Flannery, J.W. Orton, I. Harrison, S.V. Novikov, B.Ya. Ber, Yu.A. Kudriavtsev

1217

MBE Growth of Device-Quality Cubic GaN on Atomically Flat (001) GaAs Prepared by Atomic-Hydrogen Treatment at High Temperatures

Authors: Akira Yoshikawa, Zuo Xiang Qin, H. Nagano, Y. Sugure, A.W. Jia, M. Kobayashi, Y. Kato, Kazuhiko Takahashi

1221

Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films

Authors: Sukkaneste Tungasmita, Jens Birch, L. Hultman, Erik Janzén, J.-E. Sundgren

1225

Magnetron Sputter Epitaxy of Gallium Nitride on (0001) Sapphire

Authors: J.B. Webb, D. Northcott, S. Charbonneau, Fan Yang, D.J. Lockwood, O. Malvezin, P. Singh, John Corbett

1229

Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

Authors: B. Yang, O. Brandt, Y.G. Zhang, A.Z. Li, B. Jenichen, G. Paris, K. Ploog

1235

Transmission Electron Microscopy Study of GaN on SiC on SIMOX Grown by Metalorganic Chemical Vapor Deposition

Authors: W.L. Zhou, P. Pirouz, F. Namavar, P.C. Colter, Murugesu Yoganathan, M.W. Leksono, J.I. Pankove

1239

AlN Deposition by OMVPE and PLD Used as an Encapsulate for Ion Implanted SiC

Authors: Kenneth A. Jones, K. Xie, D.W. Eckart, M.C. Wood, V. Talyansky, R.D. Vispute, T. Venkatesan, K. Wongchotigul, Michael G. Spencer

1243

The Atomic Structure of Prismatic Planar Defects in GaN/AlN Grown over Silicon Carbide and Sapphire Substrates

Authors: Gerard Nouet, Philippe Vermaut, V. Potin, Piere Ruterana, A. Salvador, Hadis Morkoç

1247

Surface Defects in GaN and Al_xGa_1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy

Authors: Min Chul Shin, A.Y. Polyakov, Marek Skowronski, Gregory S. Rohrer, R.G. Wilson

1251