Authors: A.S. Usikov, W.V. Lundin, B.V. Pushnyi, N.M. Shmidt, V.Yu. Davydov, A.V. Sakharov, T.V. Shubina, Andrey A. Toropov, N.N. Faleev, M.P. Shcheglov, A.F. Tsatsul'nikov

1393

Investigation of Thermal Annealing Processes on the Activation of Mg Acceptors and the Structural Quality of GaN

Authors: B. Schineller, A. Guttzeit, O. Schön, M. Heuken, K. Heime, R. Beccard

1397

Nanometre Scale Reactive Ion Etching of GaN Epilayers

Authors: D. Coquillat, S.K. Murad, A. Ribayrol, C.J.M. Smith, R.M. De La Rue, Chris D.W. Wilkinson, O. Briot, R.L. Aulombard

1403

Ti/Al and Cr/Al Ohmic Contacts to n-Type GaN Formed by Furnace Annealing

Authors: N. Papanicolaou, Arthur H. Edwards, Mulpuri V. Rao, Jeffrey A. Mittereder, W.T. Anderson

1407

Schottky Barrier Modification on n-GaN Using a Shallow p-Type Implant

Authors: Kevin Matocha, T. Paul Chow, H. Lu, I. Bhat

1411

Electrical Characteristics of In Situ Grown Lateral P ⁺N GaN Junction Diodes on Sapphire Substrates

Authors: Jeffery B. Fedison, T. Paul Chow, H. Lu, I. Bhat

1415

Nitride-Based Emitters on SiC Substrates

Authors: J. Edmond, G. Bulman, H.S. Kong, M. Leonard, K. Doverspike, W. Weeks, J. Niccum, S.T. Sheppard, G. Negley, D. Slater, J.D. Brown, J.T. Swindell, T. Overocker, J.F. Schetzina, Y.K. Song, M. Kuball, A.V. Nurmikko

1421