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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Substrate Bias Effects in AlGaN/GaN Doped Channel...

Substrate Bias Effects in AlGaN/GaN Doped Channel Heterostructure Field Effect Transistors Grown on Doped SiC Substrates

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

1445-1448

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.1445

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Online since:

February 1998

Authors:

Remis Gaska, Michael S. Shur, J.W. Yang, A. Osinsky, A.O. Orlov, G.L. Snider

Keywords:

Field-Effect Transistor, Heterostructures, Wide Band Gap Semiconductor

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Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

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