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High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
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Experimental Investigation of 4H-SiC Bulk Crystal Growth
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Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
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Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
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X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
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Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Influence of the Growth Direction and Polytype on...

Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.25

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Online since:

February 1998

Authors:

J. Takahashi, Noboru Ohtani, Masakazu Katsuno, S. Shinoyama

Keywords:

Growth Direction, Modified-Lely Method, Polytype, Stacking Fault

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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