Experimental Investigation of 4H-SiC Bulk Crystal Growth
p.17
p.17
Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
p.21
p.21
Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
p.25
p.25
X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
p.29
p.29
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
p.33
p.33
The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
p.37
p.37
Defect Formation Mechanism of Bulk SiC
p.41
p.41
Enlargement of SiC Crystals: Defect Formation at the Interfaces
p.45
p.45
Impurity Incorporation During Sublimation Bulk Crystal Growth of 6H- and 4H-SiC
p.49
p.49
Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
Abstract:
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Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
33-36
Citation:
Online since:
February 1998
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Сopyright:
© 1998 Trans Tech Publications Ltd. All Rights Reserved
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