Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

33-36

DOI:

10.4028/www.scientific.net/MSF.264-268.33

Citation:

S. G. Müller et al., "Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals", Materials Science Forum, Vols. 264-268, pp. 33-36, 1998

Online since:

February 1998

Export:

Price:

$35.00

In order to see related information, you need to Login.