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Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Experimental Investigation of 4H-SiC Bulk Crystal...

Experimental Investigation of 4H-SiC Bulk Crystal Growth

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

17-20

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.17

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Online since:

February 1998

Authors:

K. Chourou, Mikhail Anikin, Jean Marie Bluet, V. Lauer, Gérard Guillot, Jean Camassel, Sandrine Juillaguet, O. Chaix-Pluchery, Michel Pons, R. Pons

Keywords:

Micro Raman, Polytypism, Sublimation Growth, Wide Band Gap Semiconductor

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Сopyright:

© 1998 Trans Tech Publications Ltd. All Rights Reserved

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