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Paper Titles
SiC Seeded Boule Growth
p.3
Sponsors and Committees
p.4
Preface
p.7
High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
p.9
Sublimation Growth of 50mm Diameter SiC Wafers
p.13
Experimental Investigation of 4H-SiC Bulk Crystal Growth
p.17
Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
p.21
Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
p.25
X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
p.29

Sublimation Growth of 50mm Diameter SiC Wafers

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

13-16

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.13

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Online since:

February 1998

Authors:

Adrian R. Powell, Shao Ping Wang, G. Fechko, George R. Brandes

Keywords:

Single Crystal Expansion, Sublimation Growth, Substrate

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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