Paper Titles

High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport
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Sublimation Growth of 50mm Diameter SiC Wafers
p.13

Experimental Investigation of 4H-SiC Bulk Crystal Growth
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Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method
p.21

Influence of the Growth Direction and Polytype on the Stacking Fault Generation in α-SiC
p.25

X-Ray Section Topographic Investigation of the Growth Process of SiC Crystals
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Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals
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The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth
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HomeMaterials Science ForumMaterials Science Forum Vols. 264-268Step Structures and Structural Defects in Bulk SiC...

Step Structures and Structural Defects in Bulk SiC Crystals Grown by Sublimation Method

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Periodical:

Materials Science Forum (Volumes 264-268)

Pages:

21-24

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.21

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Online since:

February 1998

Authors:

Atsuto Okamoto, Naohiro Sugiyama, Toshihiko Tani, Nobuo Kamiya

Keywords:

Micropipe, Nitrogen Doping, Polarity, Polytype, Power Device, SiC Single Crystal, Step Structure, Subgrain Boundary, Sublimation Method

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© 1998 Trans Tech Publications Ltd. All Rights Reserved

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