Paper Titles

Adsorption and Desorption of Hydrogen on Ga-rich GaN(0001)
p.1533

Extremely Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001)
p.1537

The Reaction of Oxygen with GaN(0001)
p.1541

Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy
p.1545

Analysis of Dislocation Densities and Nanopipe Formation in MBE-grown AlN-Layers
p.1549

Correlation between Optical and Structural Properties of Thick GaN Films Grown by Direct Reaction of Ga and NH₃
p.1553

Improved Electron Emission from Defective Diamond Film Deposited by CVD Method
p.1557

Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related Materials
p.1561

Nonabrupt Interface Related Exciton Energy Shifts in GaN/Al_xGa_1-xN Quantum Dots
p.1567

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Analysis of Dislocation Densities and Nanopipe...

Analysis of Dislocation Densities and Nanopipe Formation in MBE-grown AlN-Layers

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1549-1552

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1549

Citation:

Cite this paper

Online since:

May 2000

Authors:

D.G. Ebling, L. Kirste, M. Rattunde, J. Portmann, R. Brenn, K.W. Benz, K. Tillmann

Keywords:

Atomic Force Microscope (AFM), Nanopipes, RBS/Channeling, SiC Substrates, Spiral Growth, X-Ray Diffraction (XRD)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: