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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Theory of Impurities and Defects in III-Nitrides:...

Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related Materials

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1561-1566

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1561

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Online since:

May 2000

Authors:

Chris G. Van de Walle

Keywords:

Doping, First-Principle Calculations, Impurity, Oxygen, Vacancy

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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