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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Impact of Epitaxial Lateral Overgrowth on the...

Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1575-1578

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1575

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Online since:

May 2000

Authors:

J. Holst, A. Kaschner, Andreas Hoffmann, I. Broser, P. Fischer, F. Bertram, T. Riemann, J. Christen, K. Hiramatsu, T. Shibata, N. Sawaki

Keywords:

ELOG, Excitonic Luminescence, Micro-Raman Spectroscopy, Time-Resolved Micro-PL

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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