Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1575-1578

DOI:

10.4028/www.scientific.net/MSF.338-342.1575

Citation:

J. Holst et al., "Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy", Materials Science Forum, Vols. 338-342, pp. 1575-1578, 2000

Online since:

May 2000

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