Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1591-1594

DOI:

10.4028/www.scientific.net/MSF.338-342.1591

Citation:

M. Lisker et al., "Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping", Materials Science Forum, Vols. 338-342, pp. 1591-1594, 2000

Online since:

May 2000

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