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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Enhancement of UV-Sensitivity in GaN / GaAs...

Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1591-1594

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1591

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Online since:

May 2000

Authors:

M. Lisker, Hartmut Witte, A. Krtschil, J. Christen, Donat J. As, B. Schöttker, K. Lischka

Keywords:

Deep Level, GaN/GaAs-Heterostructure, UV Detectors

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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