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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Resonant Raman Scattering and the Emission Process...

Resonant Raman Scattering and the Emission Process in Zincblende-In_xGa_1-xN

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1595-1598

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1595

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Online since:

May 2000

Authors:

V. Lemos, E. Silveira, J.R. Leite, A. Tabata, R. Trentin, T. Frey, Donat J. As, D. Schikora, K. Lischka

Keywords:

Photoluminescence in c-InGaN, Quantum Dots in c-InGaN, Raman Scattering in c-InGaN

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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