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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Influence of Annealing Conditions on Dopant...

Influence of Annealing Conditions on Dopant Activation of Si⁺ and Mg⁺ Implanted GaN

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1615-1618

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1615

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Online since:

May 2000

Authors:

A. Suvkhanov, N. Parikh, I.O. Usov, J. Hunn, S. Withrow, D. Thomson, Thomas Gehrke, Robert F. Davis, L.Ya. Krasnobaev

Keywords:

Activation, Annealing, Capping, Encapsulation, Ion Implantation, Photoluminescence (PL), Rutherford Backscattering Spectrometry

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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