Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

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“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1619-1619

DOI:

10.4028/www.scientific.net/MSF.338-342.1619

Citation:

L.S. Tan et al., "Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing", Materials Science Forum, Vols. 338-342, pp. 1619-1619, 2000

Online since:

May 2000

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