Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

L.S. Tan; A. Raman; K.M. Ng; S.J. Chua; A.T.S. Wee; S.L. Lim

doi:10.4028/www.scientific.net/MSF.338-342.1619

Paper Titles

A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide
p.1599

Low Frequency Noise in n-GaN with High Electron Mobility
p.1603

Role of Alloy Fluctuations in InGaN-Based LEDs and Laser Diodes
p.1609

Influence of Annealing Conditions on Dopant Activation of Si⁺ and Mg⁺ Implanted GaN
p.1615

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing
p.1619

Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes
p.1623

GaN PIN Photodiodes Grown on Sapphire and SiC Substrates
p.1627

Temperature Dependent Performance of GaN Schottky Diode Rectifiers
p.1631

Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n⁺-n^--n-n⁺ GaN Structures
p.1635

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Ohmic Contact Formation on Silicon-doped Gallium...

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

Abstract:

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317