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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Temperature Dependent Performance of GaN Schottky...

Temperature Dependent Performance of GaN Schottky Diode Rectifiers

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1631-1634

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1631

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Online since:

May 2000

Authors:

X.A. Cao, G.T. Dang, A.P. Zhang, F. Ren, Stephen J. Pearton, C.M. Lee, C.-C. Chuo, J.-I. Chyi, G.C. Chi, J. Han, S.N.G. Chu, R.G. Wilson

Keywords:

Breakdown Voltage, Schottky Diode, Temperature Dependence

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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