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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Characterization of AlGaN/GaN HEMT Devices Grown...

Characterization of AlGaN/GaN HEMT Devices Grown by MBE

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1647-1650

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1647

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Online since:

May 2000

Authors:

T.W. MacElwee, J.A. Bardwell, H. Tang, J.B. Webb

Keywords:

Dislocation, Heterojunction, MBE, Micro-Wave, TEM

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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