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Temperature Dependent Performance of GaN Schottky Diode Rectifiers
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Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n⁺-n^--n-n⁺ GaN Structures
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DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
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Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
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Characterization of AlGaN/GaN HEMT Devices Grown by MBE
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A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes
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Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342A Comparative Study of n-p GaN/SiC Heterojunction...

A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1651-1654

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1651

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Online since:

May 2000

Authors:

J. Vacas, H. Lahrèche, Teresa Monteiro, C. Gaspar, Eduarda Pereira, Christian Brylinski, M.A. di Forte-Poisson

Keywords:

Deep Level, Electroluminescence, Heterojunction Diodes, Homojunction Diodes

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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