Paper Titles

Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes
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GaN PIN Photodiodes Grown on Sapphire and SiC Substrates
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Temperature Dependent Performance of GaN Schottky Diode Rectifiers
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Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n⁺-n^--n-n⁺ GaN Structures
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DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
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Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
p.1643

Characterization of AlGaN/GaN HEMT Devices Grown by MBE
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A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes
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Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Improved 10-GHz Operation of GaN/AlGaN HEMTs on...

Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1643-1646

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1643

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Online since:

May 2000

Authors:

S.T. Sheppard, K. Doverspike, M. Leonard, W.L. Pribble, S.T. Allen, John W. Palmour

Keywords:

HEMT, High-Efficiency, Microwave Power, Semi-Insulating SiC, X-Band

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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