DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1639-1642

DOI:

10.4028/www.scientific.net/MSF.338-342.1639

Citation:

W. S. Lee et al., "DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process", Materials Science Forum, Vols. 338-342, pp. 1639-1642, 2000

Online since:

May 2000

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