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DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process
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Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342DC and Large-Signal RF Performance of Recessed...

DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1639-1642

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1639

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Online since:

May 2000

Authors:

Won Sang Lee, Ki Woong Chung, Moo Whan Shin

Keywords:

Maximum Frequency, MESFET, Photoelectrochemical Etching, RF

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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