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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Low Frequency Noise in n-GaN with High Electron...

Low Frequency Noise in n-GaN with High Electron Mobility

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1603-1608

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1603

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Online since:

May 2000

Authors:

Sergey L. Rumyantsev, David C. Look, Michael E. Levinshtein, M. Asif Khan, G. Simin, V. Adivarahan, J. Molnar, Michael S. Shur

Keywords:

1/f Noise, Band-to-Band, Low-Frequency Noise, Sapphire Substrate

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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