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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Radiative Recombination in InGaN/GaN Multiple...

Radiative Recombination in InGaN/GaN Multiple Quantum Wells

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

1571-1574

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.1571

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Online since:

May 2000

Authors:

Peder Bergman, Bo Monemar, G.R. Pozina, B.E. Sernelius, P.O. Holtz, Hiroshi Amano, Isamu Akasaki

Keywords:

InGaN MQW, Photoluminescence (PL), Surface Roughness (SR), Time-Resolved

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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