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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Ion Implantation Induced Defects in 6H-SiC and...

Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

442-444

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.442

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Online since:

April 2001

Authors:

W. Anwand, Gerhard Brauer, D. Panknin, Wolfgang Skorupa

Keywords:

6H-SiC, Ion Implantation, Post Implantation Heat Treatment, Radiation Damage

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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