Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour

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Periodical:

Materials Science Forum (Volumes 363-365)

Edited by:

Werner Triftshäuser, Gottfried Kögel and Peter Sperr

Pages:

442-444

Citation:

W. Anwand et al., "Ion Implantation Induced Defects in 6H-SiC and their Annealing Behaviour", Materials Science Forum, Vols. 363-365, pp. 442-444, 2001

Online since:

April 2001

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