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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Role of the RF Power on the Structure of Defects...

Role of the RF Power on the Structure of Defects in a-Si:H Films Produced by PECVD

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

454-456

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.454

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Online since:

April 2001

Authors:

Paulo M. Gordo, V.S. Subrahmanyam, Marco Duarte Naia, C. Lopes Gil, Adriano P. de Lima, G. Lavareda, C. Nunes de Carvalho, A. Amaral

Keywords:

a-Si:H, DOS, IR-Spectroscopy, RF Power Density, Slow Positron

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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