Role of the RF Power on the Structure of Defects in a-Si:H Films Produced by PECVD

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Periodical:

Materials Science Forum (Volumes 363-365)

Edited by:

Werner Triftshäuser, Gottfried Kögel and Peter Sperr

Pages:

454-456

DOI:

10.4028/www.scientific.net/MSF.363-365.454

Citation:

P. M. Gordo et al., "Role of the RF Power on the Structure of Defects in a-Si:H Films Produced by PECVD", Materials Science Forum, Vols. 363-365, pp. 454-456, 2001

Online since:

April 2001

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$35.00

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