Paper Titles

Role of the RF Power on the Structure of Defects in a-Si:H Films Produced by PECVD
p.454

A Study of Organo-Metallic Interfaces Using DBAR
p.457

Pulsed Positron Beam Study of As-Grown Defects in Epitaxial SiC
p.460

Annealing Effects in Hydrogenated Amorphous Silicon Layers
p.463

Surfaces of SiO₂-Bi₂O₃ Glasses Studied by a Slow Positron Beam
p.466

Defect Study on Si Implanted with B and BF₂ Ions by Coincidence Doppler Broadening Measurements
p.469

Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature
p.472

Defect Property in He⁺ Implanted Silicon Probed by Slow Positron Beam
p.475

GaN Thin Films on SiC Substrates Studied Using Variable Energy Positron Annihilation Spectroscopy
p.478

HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Surfaces of SiO2-Bi2O3 Glasses Studied by a Slow...

Surfaces of SiO₂-Bi₂O₃ Glasses Studied by a Slow Positron Beam

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-12

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

466-468

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.466

Citation:

Cite this paper

Online since:

April 2001

Authors:

Grzegorz P. Karwasz, W. Deng, Roberto S. Brusa, Antonio Zecca, Maria Gazda, B. Kusz, K. Trzebiatowski, D. Pliszka

Keywords:

Glasses Bismuth, Slow Positron

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: