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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Positron Annihilation in Si and Si-Related...

Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

472-474

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.472

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Online since:

April 2001

Authors:

Akira Uedono, M. Watanabe, T. Ichihashi, S. Takasu, M. Muramatsu, T. Ubukata, Hiroshi Tanino, T. Shiraishi, Shoichiro Tanigawa

Keywords:

Carbon, Interface, Monoenergetic Positron, Silicon, Silicon Carbide (SiC), SiO₂, Thermal Equilibrium

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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